Conception de transistors MOS haute tension (1200 Volts) à tranchées profondes

National audienceDans ce papier, une étude est proposée afin de trouver une alternative à la technologie IGBT 1200 Volts avec une technologie MOS innovante. Quatre technologies sont présentées et comparée : L'UMOSFET, l'OBUMOSFET, le SJVDMOSFET et le DTMOSFET. Une étude comparative, à l'aide de simulations 2D, des structures de même tenue en tension nous a permis d'écarter certaines technologies, incapable de concurrencer les performances statiques d'un IGBT 1200Volt

A 3-D analytical physically based model for the subthreshold swing in undoped trigate FinFETs

An analytical physically based analysis for undoped FinFET devices in the subthreshold and near-threshold regimes has been developed by solving the 3-D Poisson equation, in which the mobile-charge term was included. From this analysis, a subthreshold-swing model has been developed; this model is also based on a new physically based analysis of the conduction path. The subthreshold-swing model has been verified by comparison with 3-D numerical simulations and measured values; a very good agreement with both 3-D numerical simulation and the experimental results was observed

Switching performance of 65 V vertical N-channel FLYMOSFETs

International audienceIn this paper, the switching performance of 65V vertical N-channel FLYMOSFETs is investigated for the first time and compared with a conventional vertical DMOSFET (VDMOSFET). It is shown that measurements of the different capacitances and the gate charge of the two devices are comparable. A 2D simulation study of two equivalent structures (i.e. FLYMOSFET and VDMOSFET exhibiting the same breakdown voltage) confirms that floating islands did not cause parasitic or new phenomenon, in the case of weakly doped islands

Performances dynamiques des transistors FLYMOSTM 65 Volts à canal N

National audienceDans ce papier, un transistor FLYMOS™ 65V est caractérisé en commutation pour la première fois dans le but d'être comparé à un transistor VDMOS conventionnel. Il s'avère que les mesures de capacités inter-électrodes et de gate charge des deux composants sont comparables. Une étude comparative, à l'aide de simulations 2D, de deux structures de même tenue en tension nous a permis de conforter ces résultats, confirmant l'hypothèse que l'insertion d'îlot flottants n'entraînait pas de phénomène parasite ou nouveau, dans le cas d'îlots faiblement dopés

Switching Performance of 65 Volts Vertical N-Channel FLYMOSFETs

International audienceIn this paper, the switching performance of 65 Volts vertical N-channel FLYMOSFETs is investigated for the first time and compared to a conventional VDMOSFET. It is shown that measurements of the different capacitances and the gate charge of the two divices are comparable. A 2D simulation study of two equivalent structures (i.e. FLYMOSFET and VDMOSFET exhibiting the same breakdown voltage) confirms that floating islands did not cause parasitic or new phenomenon, in the case of weakly doped islands